Measurement of electron mobility in semiconductor (C.R.)

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Measurement of electron mobility in semiconductor (C.R.)

Order Code: 55806

SPECIFICATION

55806 Experimental Set Up has been designed specifically for the Measurement of Electron Mobility in Semiconductor (Drift velocity of the charge carrier acquired per unit electric field) and Hall Co-efficient. The set-up consists of Electromagnet, Constant Current Power supply, Digital Gauss Meter, Hall Effect Board, Hall Probe (Ge crystal n-type) with stand .

The set up is complete in all respect and requires no other apparatus. Practical experience on this set up carries great educative value for Science and Engineering Students.

OBJECT

To measure Electron Mobility in Semiconductor (Drift velocity of the charge carrier acquired per unit electric field).
To measure Hall Co-efficient .

FEATURES

The complete Experimental Set-up consists of the following :

ELECTROMAGNET : The electromagnet have the most widely used ‘U’ shaped soft iron yoke. The soft iron is of a special quality, structurally uniform, well machined and finished to meet the rigid standards.
- Field intensity : 7.5 KG at 10mm air-gap which flat pole pieces.
- Pole pieces : 50mm diameter.
- Energising coils : Two, each a resistance of about 3.0 ohm.
- Power requirement : 0-30V DC, 4A, its coils are connected in series.
CONSTANT CURRENT : Current range : 0 - 4 Amp.
- POWER SUPPLY Load : Better than 0.5% of the highest specified output current. (No Load to Full Load) regulation Line regulation : Better than ± 2% of the specified output current. (For ±10% Mains Variation)Metering : 3 ½ digit 7 segment LED DPM.

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